PART |
Description |
Maker |
APT17F100B APT17F100S |
N-Channel FREDFET 1000V, 17A, 0.80Ω Max, trr ?45ns N-Channel FREDFET 1000V, 17A, 0.80ヘ Max, trr ÷245ns
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Microsemi Corporation
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1SS303 |
Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.
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TY Semiconductor Co., Ltd
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ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE 8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE 8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB 8A/ 1200V Stealth Diode 8A, 1200V Stealth⑩ Diode 8A, 1200V Stealth?/a> Diode
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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APT14M120B09 APT14M120S |
N-Channel MOSFET 1200V, 14A, 1.10Ω Max
|
Microsemi Corporation
|
6MBP75RJ120 |
IGBT IPM R-series 1200V class 1200V / 75A 6 in one-package
|
Fuji Electric ETC List of Unclassifed Manufacturers
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IHW20T120 |
IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack Soft Switching Series
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INFINEON[Infineon Technologies AG]
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MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
IRG4PH30KD IRG4PH30 |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
1N6772 1N6772R 1N6773 1N6773R JANTXV1N6773R 1N6768 |
16 Amp, 50 To 600 Volts, 35 To 60 ns trr 16安培00伏特0350纳秒花环 16 Amp 50 To 600 Volts 35 To 60 ns trr
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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X4005S8 X4005S8-1.8 X4005S8-2.7 X4005S8-2.7A X4005 |
RTC Module With CPU Supervisor 时钟模块CPU监控 DIODE, STUD 95A 400VDIODE, STUD 95A 400V; Voltage, Vrrm:400V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Cathode MODULE DROP IN FOR XE1203 868MHZ Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):70A; Non Repetitive Forward Surge Current Max, Ifsm:1150A; Forward Voltage Max, VF:1.5V; Package/Case:DO-203AB THYRISTOR, CAPSULE, 550A; Thyristor/Triac type:Thyristor; Voltage, Vdrm:1200V; Current, It rms:1200A; Current, Itsm:9000A; Current, Igt:250mA; Voltage, Vgt:1.65V; Case style:TO-200; Current, It av:550A; Diameter, External:41mm; RoHS Compliant: Yes
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Intersil, Corp. XICOR[Xicor Inc.]
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